| PART |
Description |
Maker |
| 28F002BV-T E28F002BV-B80 |
2-MBIT (128K X 16, 256K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
2-Mbit (128K x 16, 256K x 8) SmartVoltage boot block flash memory family. Access speed Vcc=5V, voltage options (Vpp/Vcc) V=(5 or 12 / 3.3 or 5)
|
Intel
|
| AB28F200BX-T90 AB28F200BX-B90 A28F200BX-T |
2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
2-MBIT (128K x 16 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
|
INTEL[Intel Corporation]
|
| IDT71V3558SA133PFGI IDT71V3558SA100BGG IDT71V3558S |
3.3V 256K x 18 ZBT Synchronous PipeLined SRAM w/3.3V I/O
128K x 36/ 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O/ Burst Counter Pipelined Outputs
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 5 ns, PQFP100
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 4.2 ns, PQFP100
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs 128K的3656 × 18 3.3同步ZBT SRAM.3V的I / O的脉冲计数器输出流水
TV 6C 6#12 SKT WALL RECP
Circular Connector; No. of Contacts:41; Series:D38999; Body Material:Metal; Connecting Termination:Crimp; Connector Shell Size:21; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:21-41
|
IDT
Integrated Device Technology, Inc.
|
| SST39SF010A-45-4I-WH SST39SF020A-45-4I-WH SST39SF0 |
64 Mbit (x16) Multi-Purpose Flash Plus 128K X 8 FLASH 5V PROM, 45 ns, PDSO32
64 Mbit (x16) Multi-Purpose Flash Plus 256K X 8 FLASH 5V PROM, 45 ns, PQCC32
64 Mbit (x16) Multi-Purpose Flash Plus 256K X 8 FLASH 5V PROM, 70 ns, PQCC32
64 Mbit (x16) Multi-Purpose Flash Plus 512K X 8 FLASH 5V PROM, 70 ns, PQCC32
64 Mbit (x16) Multi-Purpose Flash Plus 256K X 8 FLASH 5V PROM, 70 ns, PDIP32
64 Mbit (x16) Multi-Purpose Flash Plus 64兆位（x16）的多功能闪存加
|
Silicon Storage Technology, Inc.
PROM
SILICON STORAGE TECHNOLOGY INC
|
| CAT25C128XA-1.8-GT3 CAT25C128XA-GT3 CAT25C128XA-1. |
128K/256K-Bit SPI Serial CMOS EEPROM 128K/256K-Bit SPI串行EEPROM中的CMOS
|
ON Semiconductor
Unisonic Technologies Co., Ltd.
TDK, Corp.
Atmel, Corp.
Advanced Analog Technology, Inc.
Silicon Storage Technology, Inc.
Air Cost Control
|
| GS84032AB-180 GS84018AB-180 GS84036AB-180 GS84036A |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256 × 1828K的3228K的36 4Mb的同步突发静态存储器
256K x 18/ 128K x 32/ 128K x 36 4Mb Sync Burst SRAMs
Time-Delay Relay; Contacts:SPST-NC; Time Range:0.1 - 60 sec.; Mounting Type:Panel; Timing Function:Delay-On-Break; Supply Voltage:12VDC; Time Range Max:60s; Time Range Min:0.1s
|
ETC
Electronic Theatre Controls, Inc.
|
| IS61VF25618A-6.5TQ IS61VF25618A-6.5B3 IS61VF12836A |
128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM 256K X 18 CACHE SRAM, 6.5 ns, PQFP100
128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM 256K X 18 CACHE SRAM, 6.5 ns, PBGA165
128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM 128K X 36 CACHE SRAM, 7.5 ns, PQFP100
|
Integrated Silicon Solution, Inc.
|
| IS41LV32256 IS41LV32256-28PQ IS41LV32256-28TQ IS41 |
x32 EDO Page Mode DRAM X32号，江户页面模式的DRAM
256K x 32 (8-Mbit) EDO DRAM 3.3V, 100/83/66 MHz(3.3V, 100/83/66 MHz,256K x 32带扩展数据输出动态RAM) 256K × 32兆位），江户内存3.3伏，100/83/66兆赫.3伏，100/83/66兆赫56K × 32带扩展数据输出动态内存）
256K x 32 (8-Mbit) EDO DYNAMIC RAM 3.3V, 100/83/66 MHz
|
Integrated Silicon Solution, Inc.
|
| ST1335 ST1355-CW4 ST1335-BD10 ST1335-BD15 ST1335-B |
5-CONTACT MEMORY CARD IC 272 BIT EEPROM WITH ADVANCED SECURITY MECHANISMS
5V, 3.3V, ISR™ High-Performance CPLDs
NX2LP DEVELOPMENT KIT
KIT DEV MOBL-USB FX2LP18
MoBL® 4-Mbit (256K x 16) Static RAM
MoBL® 1-Mbit (64K x 16) Static RAM
MoBL® 1 Mbit (128K x 8) Static RAM
MoBL® 2-Mbit (128K x 16) Static RAM
(ST1335/13361355) 5-Contact Memory Card IC 272-bit EEPROM with Advanced Security Mechanisms
MoBL® 1-Mbit (64K x 16) Static RAM EEPROM
5V, 3.3V, ISR™ High-Performance CPLDs EEPROM
MoBL® 4-Mbit (256K x 16) Static RAM EEPROM
5-Contact Memory Card IC 272-bit EEPROM with Advanced Security Mechanisms 5，联系记忆卡IC 272位具有高级安全机制的EEPROM
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
ST Microelectronics
STMicroelectronics N.V.
|
| CY62147DV30L-55BVXE CY62147DV30LL-45BVXI CY62147DV |
4-Mbit (256K x 16) Static RAM 256K X 16 STANDARD SRAM, 45 ns, PDSO44
4-Mbit (256K x 16) Static RAM 256K X 16 STANDARD SRAM, 55 ns, PDSO44
4-Mbit (256K x 16) Static RAM 256K X 16 STANDARD SRAM, 55 ns, PBGA48
4-Mbit (256K x 16) Static RAM 4兆位56K × 16）静态RAM
4-Mbit (256K x 16) Static RAM 256K X 16 STANDARD SRAM, 70 ns, PBGA48
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| IDT71V25761 IDT71V25781 IDT71V25781S166PF IDT71V25 |
128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 3.5 ns, PBGA165
128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 3.1 ns, PQFP100
128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 3.3 ns, PBGA165
128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 3.1 ns, PBGA119
128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K的米656 × 18 3.3同步SRAM.5VI / O的流水线输出，脉冲计数器，单周期取消
|
Integrated Device Technology, Inc.
|
| SST29VE010-200-4I-EHE SST29VE010-200-4I-WHE SST29V |
1 Mbit (128K x8) Page-Write EEPROM 128K X 8 FLASH 2.7V PROM, 150 ns, PDSO32
1 Mbit (128K x8) Page-Write EEPROM 128K X 8 EEPROM 3V, 150 ns, PDSO32
1 Mbit (128K x8) Page-Write EEPROM 128K X 8 EEPROM 3V, 200 ns, PDSO32
|
Silicon Storage Technology, Inc.
|
|
